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ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) ( ) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 4 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features * * * * Low on-resistance Fast switching speed Low gate drive SOT223 package D G S Applications * * * * DC-DC converters Power management functions Disconnect switches Motor control S D D G Ordering information Device ZXMN10A25GTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Pinout - top view Device marking ZXMN 10A25 Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN10A25G Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25C(b) @ VGS= 10V; Tamb=70C(b) @ VGS= 10V; Tamb=25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 100 20 4 3.2 2.9 17 5.4 17 2 16 3.9 31 -55 to +150 A A A W mW/C W mW/C C Unit V V A Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 62.5 32 Unit C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN10A25G Thermal characteristics Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN10A25G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) Forward transconductance(*)() Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time() Reverse recovery charge() VSD trr Qrr 0.85 40.5 62 0.95 V ns nC Tj=25C, IS= 4A, VGS=0V Tj=25C, IS= 2.9A, di/dt=100A/ s td(on) tr td(off) tf Qg Qg Qgs Qgd 4.9 3.7 18 9.4 9.6 17 3.8 5.4 ns ns ns ns nC nC nC nC VDS= 50V, VGS= 5V ID= 2.9A VDS= 50V, VGS= 10V ID= 2.9A VDD= 50V, ID= 1A RG6.0 , VGS= 10V Ciss Coss Crss 859 57 33 pF pF pF VDS= 50V, VGS=0V f=1MHz IDSS IGSS VGS(th) RDS(on) 2.0 100 0.5 100 4.0 0.125 0.150 gfs 7.3 S V A nA V ID= 250 A, VGS=0V VDS= 100V, VGS=0V VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= 10V, ID= 2.9A VGS= 6V, ID = 2.6A VDS= 15V, ID= 2.9A Symbol Min. Typ. Max. Unit Conditions NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN10A25G Typical Characteristics Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN10A25G Typical Characteristics Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMN10A25G Intentionally left blank Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN10A25G Package outline - SOT223 DIM A A1 b b2 C D Millimeters Min 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 - Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - July 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
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